| PART |
Description |
Maker |
| MT88E43BS MT88E43B MT88E43BE MT88E43BS1 MT88E43BSR |
Extended Voltage Calling Number Identification Circuit 2
|
Zarlink Semiconductor Inc
|
| MT88E45 |
Dual inputs (tip/ring and 4 wire) Extended Voltage Calling Number Identification Circuit for CLIP, CID and CIDCW applications (Type 2)
|
Zarlink Semiconductor
|
| MT88E41 |
Extended Voltage Calling Number Identification Circuit (ECNIC)(扩展电压主叫识别电路（提供各种主叫线信息传递设备的接口 扩展电压主叫号码识别电路ECNIC）（扩展电压主叫识别电路（提供各种主叫线信息传递设备的接口））
|
Mitel Networks Corporation
Mitel Networks, Corp.
|
| K4E160411D K4E160412D K4E170411D K4E170412D K4E167 |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
Samsung semiconductor
|
| MT88E45BS MT88E45BN1 |
4-Wire Calling Number Identification Circuit 2 (4-Wire CNIC2) TELEPHONE CALLING NO IDENT CKT, PDSO20
|
Zarlink Semiconductor, Inc.
|
| K4E660412E-JI45 K4E640412E-JP45 K4E660412E-JI60 K4 |
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 33uF; Voltage: 100V; Case Size: 10x25 mm; Packaging: Bulk
CONNECTOR ACCESSORY
16M x 4bit CMOS Dynamic RAM with Extended Data Out 16米x 4位的CMOS动态随机存储器的扩展数据输
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
| HCMS-2353 HCMS-2351 HCMS-2354 HCMS-2352 HCMS-2311 |
CMOS Extended Temperature Range 5 x 7 Alphanumeric Displays(CMOS 扩展温度范围 5 x 7文字数字显示 扩展温度范围的CMOS 5 × 7字母数字显示器（扩展温度范围的CMOS 5 × 7文字数字显示器）
|
HIROSE ELECTRIC Co., Ltd.
|
| GLT44016 GLT44016-25J4 GLT44016-25TC GLT44016-28J4 |
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
|
ETC
|
| KM416C12CJ-L5 KM416V12CJ-L5 KM416V10CJ-L5 KM416C10 |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out 100万16的CMOS动态随机存储器的扩展数据输
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
